PDS4910 mosfets equivalent, n-channel mosfets.
* 40V, 6.7A, RDS(ON)=19mΩ@VGS = 10V
* Improved dv/dt capability
* Fast switching
* Green Device Available
Applications
* Notebook
* Load Switch
SOP8 Pin Configuration
D DD D
G S SS
G
D S
BVDSS 40V
RDSON 19m
ID 6.7A
Features
* 40V, 6.7A, RDS(ON)=19mΩ.
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy.
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